收藏本站
NTMFS4108N
THERMAL RESISTANCE RATINGS
Rating
Junction ? to ? Case (Drain Terminal)
Junction ? to ? Ambient ? Steady State (Note 3)
Junction ? to ? Ambient ? t v 10 s (Note 3)
Junction ? to ? Ambient ? Steady State (Note 4)
Symbol
R q JC
R q JA
R q JA
R q JA
Max
1.3
45.7
17.3
117
Unit
° C/W
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
21
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = 24 V
T J = 25 ° C
T J = 125 ° C
1.0
25
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = 20 V
100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
7.5
2.5
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 4.5 V, I D = 19 A
2.7
3.4
m W
V GS = 10 V, I D = 21 A
1.8
2.2
Forward Transconductance
g FS
V DS = 15 V, I D = 10 A
25
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
6000
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz, V DS = 15 V
1200
700
Total Gate Charge
Q G(TOT)
54
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 24 V, I D = 21 A
11
16
23
Gate Resistance
R G
0.7
W
SWITCHING CHARACTERISTICS, V GS = 10 V (Note 6)
Turn ? On Delay Time
t d(ON)
45
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 15 V,
I D = 1.0 A, R G = 6.0 W
60
70
140
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = 6.0 A
T J = 25 ° C
T J = 125 ° C
0.72
0.65
1.1
V
Reverse Recovery Time
t RR
41
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 6.0 A
20
21
Reverse Recovery Charge
Q RR
45
nC
3.
4.
5.
6.
Surface ? mounted on FR4 board using 1 ″ sq. pad size (Cu area = 650 mm 2 [1 oz] including traces).
Surface ? mounted on FR4 board using the minimum recommended pad size (Cu area = 50 mm 2 ).
Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTMFS4119NT1G MOSFET N-CHAN 18A 30V SO-8FL
NTMFS4120NT1G MOSFET N-CHAN 18A 30V SO-8FL
NTMFS4121NT1G MOSFET N-CHAN 17A 30V SO-8FL
NTMFS4122NT1G MOSFET N-CHAN 14A 30V SO-8FL
NTMFS4701NT3G MOSFET N-CH 12.3A 30V SO8 FL
NTMFS4707NT3G MOSFET N-CH 30V 6.9A SO8 FL
NTMFS4708NT3G MOSFET N-CH 30V 7.8A SO8 FL
NTMFS4744NT1G MOSFET N-CH 30V 7A SO8 FL
相关代理商/技术参数
NTMFS4108NT3G 功能描述:MOSFET NFET SO8FL 40A 30V 1.8mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4119N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 Flat Lead
NTMFS4119NT1G 功能描述:MOSFET NFET 32A 30V 2.7MOH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4119NT3G 功能描述:MOSFET NFET 32A 30V 2.7MOH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4120N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead
NTMFS4120NT1G 功能描述:MOSFET 30V 31A Single N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4120NT3G 功能描述:MOSFET 30V 31A Single N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4121N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 29 A, Single N-Channel, SO-8 Flat Lead